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Case Study: 1kW PFC – ICERGi vs. GaN

Features

1kW Bridgeless Totem-Pole PFC Comparison

The advantages of ICERGi technologies are clear when compared to conventional PFC approaches based on conventional topologies. However, incremental steps in the efficiency are no longer enough and the global trend requires a leap. In order to do this, the industry is adapting the Bridgeless Totem-Pole PFC topology. Unfortunately, Bridgeless Totem-Pole is a hard-switched topology and Superjunction MOSFETs are not suited for this task. This is where GaN comes in, with the promise of very low ON resistance (further boost in efficiency) and much faster switching frequency (allow using smaller inductor).

ICERGi PFC designs use MOSFETs in a 5x6mm SMD package. This is an industry standard package and many transistors from various manufacturers are available for multisourcing. GaN Systems Inc. produce GaN FETs in a 5x6mm SMD package and therefore have been selected for a like-to-like comparison with ICERGi.

Loss Breakdown: 1kW @ 230Vac
1kW Totem-Pole PFC ICERGi
65kHz Si
65kHz GaN 260kHz GaN
Switches 28mR 150V MOSFET
TPH3300CNH
100mR 650V GaN
GS66504B
100mR 650V GaN
GS66504B
Inductor Volt-Seconds 768Vµs 3072Vµs 768Vµs
Relative Inductor Size 0.25x 1x 0.25x
Switching Loss 4W 3.2W 12.8W*
Core Loss 0.4W 0.8W 0.6W
Conduction Loss 7.69W 7.9W 7.69W
Control & Drive Power 0.7W 0.5W 1W
Total Loss 12.79W 12.4W 22.09W
Efficiency 98.73% 98.77% 97.83%
* Switching loss is linearly proportional to switching frequency. Therefore, 4x higher switching frequency will result in 4x higher switching loss.

A lot of messages about GaN mention increase in efficiency and increase in switching frequency (reduced inductor size) which may lead people to believe that both hold true for any scenario. However, the loss breakdown reveals that in a hard-switched topology these advantages do not come together. ICERGi design overcomes this and offers highest efficiency together with reduced inductor size.

EMI Noise: 1kW @ 230Vac
1kW Totem-Pole PFC ICERGi
65kHz Si
65kHz GaN 260kHz GaN
Fundamental (First) harmonic as dictated by inductor frequency 130kHz 65kHz 260kHz
Main noise component that needs to be dealt with for EMI standard 360kHz
(Third harmonic)
195kHz
(Third harmonic)
260kHz
(First harmonic)

Fourier theory states that the amplitudes of the harmonics are reversely proportional to square of the harmonic order. This means that the third harmonic will be 9 times smaller than the first (fundamental) harmonic.**

** B. Lu, W. Dong, S. Wang and F. C. Lee, "High frequency investigation of single-switch CCM power factor correction converter," Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2004. APEC '04., Anaheim, CA, USA, 2004, pp. 1481-1487 Vol.3.

260kHz implementation will face significant EMI challenges because the first harmonic has to be suppressed. This will result in a complex and costly EMI filter. This observation applies to any conventional design with switching frequency above 150kHz.

ICERGi Si implementation has two significant EMI advantages:

Control and Drive Requirements
1kW Totem-Pole PFC ICERGi
65kHz Si
65kHz GaN 260kHz GaN
Modulation 65kHz PWM
Variable duty ratio
65kHz PWM
Variable duty ratio
260kHz PWM
Variable duty ratio
Sampling frequency 65kHz 65kHz 260kHz
Minimum ON time
(Duty ration=0.05)
800ns 800ns 200ns
Drive requirements 8 x ICERGi proprietary low-cost drive 2 x High-performance floating drive 2 x High-performance floating drive
Current sensing Low-side resistor &
Low-cost Op-Amp
High-side resistor &
High-Performance Isolated Op-Amp
High-side resistor &
High-Performance Isolated Op-Amp
Digital Control Hardware Demand Low cost
Proprietary control algorithm with multi-mode operation
Comparable cost Higher cost
High sampling frequency and fast control loop

Aside from reduced cost of current sensing, ICERGi has implemented a cycle-by-cycle control on a low cost, low memory variant of an ARM® Cortex™-M0 microcontroller. An M0 is limited to 48MHz operation and in order to implement similar control strategy on a GaN converter running 4x faster switching frequency one would have to upgrade to a much faster microcontroller. Some industry examples use a much more expensive Cortex™-M4. An M4 comes with a many advanced peripherals and lots of memory, all of which are not necessary and were never intended for SMPS applications. So if one needs a faster core, one must bear the extra cost of all the unnecessary functionality too.

Thermal Management
1kW Totem-Pole PFC ICERGi
65kHz Si
65kHz GaN 260kHz GaN
Switches 8 x 150V MOSFETs
in 5x6mm SMD
2 x 650V GaNFETs
in 5x6mm SMD
2 x 650V GaNFETs
in 5x6mm SMD
Total loss in power switches 7.4W 6.3W 15.9W
Loss per switch 0.925W 3.15W 15.9W
Relative Thermal Impedance***
(Device junction to heatsink)
1x 1x 1x
Relative Component Temperature Rise
(Difference between device junction and heatsink)
1x 3.4x 8.59x
*** Heatsink size is assumed to be similar for all three designs.

ICERGi Si implementation enables significantly cooler operation of power switches resulting in various benefits such as:

It is worth noting that this could be a much worse scenario for GaN implementations because other manufacturers use much, much smaller packaging which results in very low surface area and multiple times higher thermal impedance, making it very difficult to keep the switching devices cool.