Gate Drivers

KEY FEATURES

  • Dual driver cell for power switches 600V/2kV; Single variant 5kV;
  • Fast, precise drive – typical propagation time<10ns
  • No requirement for bootstrap diode and associated capacitance
  • Designed for complementary operation
  • Fully floating operation of both driven devices
  • Magnetic coupling for full galvanic isolation between control and driven devices
  • Compact footprint (8.4mm x 8.0mm)
  • Easy surface-mount using cut (“castellated”) edge-holes
  • Optimised for pulse drive from 2.5V-3.3V digital circuitry
  • XORCell™ functionality where simultaneous application of pulses results in zero drive, allowing simple deadtime implementation
  • Designed for minimal control-output capacitance – consistent with high common-mode dV/dt immunity
  • Zero-power consumption unless active
  • No latency or start-up delay
  • Low-impedance pull-down of driven devices, also when inactive
  • Loss-Of-Drive protection restores pull-down level in typically ~100µs

 

DEPLOYMENT

  • Switching device drive needing level shifting, “high side” or floating operation
  • Proven in Power Factor Correction, LLC, and Asymmetric Half Bridge controllers
  • Wide voltage range allows usage with MOS or GaN devices
  • Secondary side control of synchronous rectifiers

 

VARIOUS IMPLEMENTATIONS

600V HALF-BRIDGE

Complementary driver optimised for functional isolation up to 600V, suited to Si, GaN or SiC usage

2kV HALF-BRIDGE

Complementary driver optimised for Basic Isolation up to 2kV, suited to Si, GaN or SiC usage

5kV IGBT SINGLE

Driver optimised for IGBT-type requirements (e.g. Desat, Miller Clamp management) and with Reinforced Isolation

3-LEVEL DRIVE ARRAY

Driver array (8x) suited to fully-isoated drive of 150V FET devices in 3-level configuration for PFC, Inverter, Active Filter etc

5-LEVEL DRIVE ARRAY

Driver array (8x) suited to  fully-isolated drive of 150V FET devices in 5-level configuration for PFC, Inverter, Active Filter etc